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Emergence of one-dimensional wires of free carriers in transition-metal-dichalcogenide nanostructures

机译:自由载流子一维导线的出现   过渡金属二硫化物纳米结构

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摘要

We highlight the emergence of metallic states in two-dimensionaltransition-metal-dichalcogenide nanostructures -nanoribbons, islands, andinversion domain boundaries- as a widespread and universal phenomenon driven bythe polar discontinuities occurring at their edges or boundaries. We show thatsuch metallic states form one-dimensional wires of electrons or holes, with afree charge density that increases with the system size, up to completescreening of the polarization charge, and can also be controlled by thespecific edge or boundary configurations, e.g. through chemisorption ofhydrogen or sulfur atoms at the edges. For triangular islands, local polardiscontinuities occur even in the absence of a total dipole moment for theisland and lead to an accumulation of free carriers close to the edges,providing a consistent explanation of previous experimental observations. Tofurther stress the universal character of these mechanisms, we show that polardiscontinuities give rise to metallic states also at inversion domainboundaries. These findings underscore the potential of engineeringtransition-metal-dichalcogenide nanostructures for manifold applications innano- and opto-electronics, spintronics, catalysis, and solar-energyharvesting.
机译:我们着重指出在二维过渡金属二卤化碳纳米结构中,金属态的出现-纳米核,岛和反转域边界,是一种普遍的普遍现象,是由其边缘或边界处的极性不连续性驱动的。我们显示出这种金属态形成电子或空穴的一维线,其自由电荷密度随系统尺寸的增加而增加,直至极化电荷的完全屏蔽,并且还可以通过特定的边缘或边界构型来控制,例如通过边缘处氢或硫原子的化学吸附。对于三角岛,即使在岛上没有总偶极矩的情况下也会发生局部极点间断,并导致靠近边缘的自由载流子积累,从而为以前的实验观察提供了一致的解释。进一步强调了这些机制的普遍性,我们证明了极性不连续性也在反演域边界处引起了金属态。这些发现强调了工程过渡金属二卤化碳纳米结构在纳米和光电,自旋电子,催化和太阳能收集等多种应用中的潜力。

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